- Small die size
- RDS(ON) 4Ω (Typ); at VGS = 10V
- RDS(ON) 4.5 (Typ)Ω at VGS = 4.5V
- Low Gate Charge: 0.47nC (Typ)
- Low Input Capacitance: 30pF (Typ)
- Integral ESD protection diode
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 0.109mm² (168.757mil²)
Request Pad Layout
- Channel: P
VGS: 20±V
VGS(th)min: -1.1V
VGS(th)max: -2.5V
RDS(on)max@ 4.5V: 7.0Ω
RDS(on)max@ 10V: 6.0Ω
Qg: 0.5nC
ID: -210mA
IDM: -530mA
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.