- RDS(ON)MAX 1.5Ω at VGS = -1.8V
- RDS(ON)MAX 1.04Ω at VGS = -2.5V
- RDS(ON)MAX -0.76Ω at VGS = 4.5V
- Low ON threshold voltage: -0.40V
- Very fast switching speed
- Ultra-small die size
- Integral 1kV hbm ESD protection diode
- Gold back metalization for enhanced mechanical reliability
- For equivalent N-Channel see Si1012R
Vishay
Electrical Datasheet
Die Physical Data:
Footprint: 0.174mm² (269.882mil²)
Request Pad Layout
- Channel: P
- ESD Diode: Yes
VGS: 8V±
VGS(th)min: -0.40V
RDS(on)max@ 4.5V: 760.0mΩ
RDS(on)max@ 10V: n/a
Qg: 1.7nC
ID: -0.5A
IDM: -2A
ID 70°C: -0.36A
RDS(on)@ 1.8V: 1,200.0mΩ
RDS(on)@ 2.5V: 865.0mΩ
RDS(on)@ 4.5V: 630.0mΩ
- Channel: P
VGS: 8±V
VGS(th)min: -0.4V
VGS(th)max: -1.0V
RDS(on)max@ 4.5V: 0.8Ω
RDS(on)max@ 10V: n/a
Qg: 1.7nC
ID: -450mA
IDM: -1,500mA
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.