- RDS(ON)MAX 1.25Ω at VGS = 1.8V
- RDS(ON)MAX 0.85Ω at VGS = 2.5V
- RDS(ON)MAX 0.70Ω at VGS = 4.5V
- Low ON threshold voltage: 0.45V
- Very fast switching speed: 10ns
- Ultra-small die size
- Integral 2kV ESD protection diode
- Gold back metalization for enhanced mechanical reliability
- For equivalent P-Channel see Si1013CX
Vishay
Electrical Datasheet
Die Physical Data:
Footprint: 0.203mm² (313.876mil²)
Request Pad Layout
- Channel: N
- ESD Diode: Yes
VGS: 6V±
VGS(th)min: 0.45V
RDS(on)max@ 4.5V: 700.0mΩ
RDS(on)max@ 10V: n/a
Qg: 0.8nC
ID: 0.6A
IDM: 1A
ID 70°C: 0.40A
RDS(on)@ 1.8V: 700.0mΩ
RDS(on)@ 2.5V: 530.0mΩ
RDS(on)@ 4.5V: 410.0mΩ
- Channel: N
VGS: 8±V
VGS(th)min: 0.5V
VGS(th)max: 0.9V
RDS(on)max@ 4.5V: 0.7Ω
RDS(on)max@ 10V: n/a
Qg: 0.8nC
ID: 600mA
IDM: 1,000mA
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.