Bare Die Product Detail: IRFC140NCDV

Power MOSFET:
100V 33A N-Channel 5th Generation Power MOSFET with reduced die size and lowered RDS_(ON)

Originally produced by International Rectifier (IR) this MOSFET is visually inspected to Military criteria and suited for Hi-Rel applications.

Features:

Low R_DS(on) trench technology
MIL-STD-750 Method 2072 military visual inspection

Vendor:
International Rectifier
Electrical Datasheet

Die Physical Data:
Footprint: 13.195mm² (20452.312mil²)
Request Pad Layout

Product Families: Used for this device are tabulated below.

Power MOSFET

Functional:

Channel: N
ESD Diode: No

Specification:

V_DS: 100V
V_GS: 20V±
V_GS(th)min: 2.00V
R_DS(on)max@ 4.5V: n/a
R_DS(on)max@ 10V: 52.0mΩ
Q_g: 94.0nC
I_D: 33.0A
I_DM: 110A
I_D ^70°C: n/a
R_DS(on)@ 1.8V: n/a
R_DS(on)@ 2.5V: n/a
R_DS(on)@ 4.5V: n/a

Other Detail: Important information for this device is tabulated below.

Traffic light setting for Minimum Order Quantity indicates the following:

Green:Available from stock or at low factory MOQ.
Amber: Available on factory order with MOQ.
Red: High factory MOQ may apply, please ask for details.

Traffic light setting for High Reliability indicates the following:

Green: This bare die is specified and tested for use in high reliability applications.
Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
Red: This bare die is not specified or specifically designed for use in high reliability applications.

Traffic light setting for Space Grade indicates the following:

Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.