Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SIGC10T65E

600V & 650V IGBT:
Trenchstop™ IGBT 3 Bare Die. The Trenchstop™ IGBT is a combination of Trench & Field Stop technology considered to be a benchmark in the industry.
Features:
  • 650V Trench & Field Stop technology
  • Low VCEsat
  • Low turn-off losses
  • Short tail current
  • Positive temperature coefficient
  • Easy paralleling

Applications:

  • Motor & Control Drives
Vendor:
Infineon
  Electrical Datasheet

Die Physical Data:
Footprint: 10.240mm² (15871.894mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Status: Active
  • Technology: FS Trench
  • TJ(MAX): 175°C
  • Short Circuit Rated: No
  • Integral Gate Resistor: No
  • Top Metal: Bondable
Specification:
VCE(Max): 650V
IC(Max): 20A
VCEsat(Max): 1.87V
VGEth(Min): 5.1V
VGEth(Max): 6.4V
tr:   n/a
tf:   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

LMV791:
17 MHz, Low Noise, CMOS Input, 1.8V Operational Amplifiers with Shutdown
TLC2262:
Dual Advanced LinCMOS(TM) Rail-To-Rail Operational Amplifier
SN74LS174:
Hex D-Type Flip-Flops With Clear
CD4013B:
CMOS Dual D-Type Flip Flop
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.