Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: IGC10R60DE

600V & 650V IGBT:
Trenchstop™ RC-Series for hard switching applications combines Trench and Field Stop technology and includes a monolithically integrated diode for reverse conducting.
Features:
  • Monolithic diode included
  • Optimized VCEsat and VF for low conduction losses
  • Smooth switching performance leading to low EMI levels
  • Very tight parameter distribution
  • Operating range of 1 to 20kHz
  • Maximum junction temperature 175°C
  • Short circuit capability of 5µs

Applications:

  • Motor & Control Drives
Vendor:
Infineon
  Electrical Datasheet

Die Physical Data:
Footprint: 10.071mm² (15610.098mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Status: Active
  • Technology: FS Trench RC
  • TJ(MAX): 175°C
  • Short Circuit Rated: Yes
  • Integral Gate Resistor: No
  • Top Metal: Bondable
Specification:
VCE(Max): 600V
IC(Max): 15A
VCEsat(Max): 5.70V
VGEth(Min): 4.3V
VGEth(Max): 5.7V
tr:   n/a
tf:   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL064:
Quad Low-Power JFET-Input General-Purpose Operational Amplifier
SN74HCT00:
Quadruple 2-Input Positive-NAND Gates
CD74HC74:
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset
SN75240:
Dual USB Port Transient Suppressor
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.