Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SIGC42T120CQ

1200V IGBT:
IGBT 2 High speed Bare Die in Field Stop technology
Features:
  • 1200V Fieldstop technology
  • 120µm thickness
  • Low turn-off losses
  • Short tail current
  • Positive temperature coefficient
  • Easy paralleling

Applications:

  • Welding, SMPS, Resonant applications
Vendor:
Infineon
  Electrical Datasheet

Die Physical Data:
Footprint: 42.769mm² (66292.312mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Status: NRND
  • Technology: Field Stop
  • TJ(MAX): 150°C
  • Short Circuit Rated: No
  • Integral Gate Resistor: No
Specification:
VCE(Max): 1,200V
IC(Max): 25A
VCEsat(Max): 2.10V
VGEth(Min): 5.5V
VGEth(Max):   n/a
tr: 25.00ns
tf: 96.00ns
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL084:
JFET-Input Operational Amplifier
SN74HC04:
Hex Inverters
SN74LS32:
Quad 2-input positive-OR gates
SN74LS73A:
Dual J-K Flip-Flops with Clear
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.