Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: ZTX953

PNP Bipolar Transistor:
PNP Bipolar transistor
P-Channel Bipolar transistors for use in general purpose applications
Features:
  • Diodes Inc
Vendor:
Diodes Inc
  Electrical Datasheet

Die Physical Data:
Footprint: 2.809mm² (4353.926mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
    N/A
Specification:
V(BR)CEO, VCES: -100V
IC(Max): -3.50A
hFE1(Min): 100
hFE1(Max):   n/a
hFE1 @ IC: -1,000.0mA
hFE2(Min): 30
hFE2 @ IC: -4,000.0mA
VCE(sat)1(Max): -0.100V
VCE(sat)1 IC/IB: 1/100A/mA
VCE(sat)2(Max): -0.33V
VCE(sat)2 IC/IB: 4/100A/mA
fT(Typ): 125MHz
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74HC14:
Hex Schmitt-Trigger Inverters
SN74LS08:
Quadruple 2-Input Positive-AND Gates
SN74LS02:
Quad 2-input positive-NOR gates
SN74LS73A:
Dual J-K Flip-Flops with Clear
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.