- High Switching Speed
- hFE improved linearity
- Collector-Emitter Sustaining Voltage: VCEO(sus) = -100V (min) @ -30 mA
- Low collector-emitter saturation voltage: VCE(sat) = -1.2V (Max) @ IC = -3A
Applications:
- General purpose power amplification
- Switching of large currents
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 2.044mm² (3169.57mil²)
Request Pad Layout
- N/A
IC(Max): -3.00A
hFE1(Min): 10
hFE1(Max): 50
hFE1 @ IC: -3,000.0mA
hFE2(Min): 25
hFE2 @ IC: -1,000.0mA
VCE(sat)1(Max): -1.200V
VCE(sat)1 IC/IB: 3/375A/mA
VCE(sat)2(Max): n/a
VCE(sat)2 IC/IB: -A/mA
fT(Typ): 3MHz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.