- BVCEO > -100V
- IC = -5A High Continuous Collector Current
- ICM = -10A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < -105mV @ -1A
- hFE Specified up to -10A for a High Gain Hold-up
- Gold Back Metal For High Reliability Eutectic Die Attach
- Complementary NPN Type: SiS853
Applications:
- Applications requiring high pulse currents
- High-voltage DC-to-DC conversion
- High-voltage MOSFET gate driving
- High-voltage motor control
- High-voltage power switches
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 2.789mm² (4322.808mil²)
Request Pad Layout
- N/A
IC(Max): -5.00A
hFE1(Min): 140
hFE1(Max): 300
hFE1 @ IC: -1,000.0mA
hFE2(Min): 33
hFE2 @ IC: -4,000.0mA
VCE(sat)1(Max): -0.105V
VCE(sat)1 IC/IB: 1/100A/mA
VCE(sat)2(Max): -0.38V
VCE(sat)2 IC/IB: 4/400A/mA
fT(Typ): 150MHz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.