- High DC Current Gain: hFE = 3750 (Typ) @ IC = 3A
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 80V (min) @ 100 mA
- Low collector-emitter saturation voltage:
- VCE(sat) = 2V (Max) @ IC = 3A
- VCE(sat) = 4V (Max) @ IC = 5A
- Built-in Base-Emitter shunt resistor
Applications:
- General purpose linear and switching of large currents
- Enabling high impedance circuitry.
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 5.774mm² (8949.741mil²)
Request Pad Layout
- N/A
IC(Max): 5.0A
hFE1(Min): 1,000
hFE1(Max): n/a
hFE1 @ IC: 3,000mA
hFE2(Min): 1,000
hFE2 @ IC: 500mA
VCE(sat)1(Max): 2.0V
VCE(sat)1 IC/IB: 3/12A/mA
VCE(sat)2(Max): 4.0V
VCE(sat)2 IC/IB: 5/20A/mA
fT(Typ): n/a
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.