- BVCEO > 100V
- IC = 6A High Continuous Collector Current
- ICM = 10A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 160mV @ 2A
- hFE Specified up to 10A for a High Gain Hold-up
- Gold Back Metal For High Reliability Eutectic Die Attach
- Complementary PNP Type: SiS953
Applications:
- Applications requiring high pulse currents
- High-voltage DC-to-DC conversion
- High-voltage MOSFET gate driving
- High-voltage motor control
- High-voltage power switches
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 2.789mm² (4322.808mil²)
Request Pad Layout
- N/A
IC(Max): 6.000A
hFE1(Min): 140
hFE1(Max): 300
hFE1 @ IC: 2,000mA
hFE2(Min): 60
hFE2 @ IC: 4,000.00mA
VCE(sat)1(Max): 0.045V
VCE(sat)1 IC/IB: 0.1/5A/mA
VCE(sat)2(Max): 0.38V
VCE(sat)2 IC/IB: 5/250A/mA
fT(Min): 190MHz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.