- BVCEO > 50V
- IC = 2A High Continuous Collector Current
- ICM = 6A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 220mV @ 2A
- hFE Specified up to 6A for a High Gain Hold-up
- Gold Back Metal For High Reliability Eutectic Die Attach
Applications:
- MOSFET gate driving
- High-voltage DC-to-DC or DC-to-AC conversion
- Regulators
- High-voltage motor control
- High-voltage power switches
Diodes Inc
Electrical Datasheet
Die Physical Data:
Footprint: 0.790mm² (1224.001mil²)
Request Pad Layout
- N/A
IC(Max): 2.000A
hFE1(Min): 200
hFE1(Max): 400
hFE1 @ IC: 1mA
hFE2(Min): 100
hFE2 @ IC: 2.00mA
VCE(sat)1(Max): 0.200V
VCE(sat)1 IC/IB: 1/10A/mA
VCE(sat)2(Max): 0.22V
VCE(sat)2 IC/IB: 2/50A/mA
fT(Min): 100MHz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.