- High Voltage BVCEO > 500V
- IC = 0.2A High Continuous Collector Current
- ICM = 0.5A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 500mV @ 50mA
- hFE Specified up to 100mA for a High Gain Hold-up
- Gold Back Metal For High Reliability Eutectic Die Attach
Applications:
- Electronic ballasts
- Motor management
- Flyback converters
- Switch Mode Power Supply
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 0.723mm² (1119.878mil²)
Request Pad Layout
- N/A
IC(Max): 0.200A
hFE1(Min): 150
hFE1(Max): 300
hFE1 @ IC: 1mA
hFE2(Min): 80
hFE2 @ IC: 50.00mA
VCE(sat)1(Max): 0.200V
VCE(sat)1 IC/IB: 0.02/2A/mA
VCE(sat)2(Max): 0.50V
VCE(sat)2 IC/IB: 0.05/10A/mA
fT(Min): 50MHz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.