- HBM ESD: 2kV
- ESD Charged Device Model : 1kV
- Features: IOFF
- Bits(#): 8
- Technology Family: CB3Q
- tpd @ Nom Voltage(Max): 0.2ns
- Voltage(Nom): 2.5, 3.3V
Texas Instruments
Electrical Datasheet
Die Physical Data:
Footprint: 1.448mm² (2244mil²)
Request Pad Layout
- Channels: 8
- Config: 1:1 SPST
VCC (Max): 3.60V
BW (Max): 500MHz
ICC (Max) @ VNOM: 2,000µA
RON (Max): 9.0Ω
RON: 4.0Ω
VIO (Min): 0.00V
VIO (Max): 5.50V
IIO (Cont): 64mA
- Channels: 8
- 3-State O/P: No
- Switch Type: SPST
VCC (Max): 3.60V
ICC (Max): 2,000µA
BW (Max): 500MHz
ICC (Max) @ VNOM: n/a
RON (Max): 9Ω
RON: 5Ω
IO (CONT): 64A
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.