- HBM ESD: 2kV
- ESD Charged Device Model : 1kV
- OFF-state leakage current (Max) : 1µA
- Turn on Time (Enable) (Max) : 6.6ns
- Input/Output OFF-state Capacitance (Typ) : 4pF
- Input/Output ON-state Capacitance (Typ) : 8pF
- Features: IOFF
- Ron Channel Match (Max) : 0Ω
- Digital input leakage : 1µA
- Off Isolation (Typ) : 0dB
Texas Instruments
Electrical Datasheet
Die Physical Data:
Footprint: 0.855mm² (1326mil²)
Request Pad Layout
- Channels: 4
- Config: 1:1 SPST
VCC (Max): 3.60V
BW (Max): 500MHz
ICC (Max) @ VNOM: 1,000µA
RON (Max): 9.0Ω
RON: 4.0Ω
VIO (Min): 0.00V
VIO (Max): 5.50V
IIO (Cont): 64mA
- Channels: 4
- 3-State O/P: No
- Switch Type: SPST
VCC (Max): 3.60V
ICC (Max): 1,000µA
BW (Max): 500MHz
ICC (Max) @ VNOM: n/a
RON (Max): 9Ω
RON: 4Ω
IO (CONT): 64A
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.