- Crosstalk : -64dB
 - HBM ESD: 2kV
 - ESD Charged Device Model : 1kV
 - OFF-state leakage current (Max) : 0.1µA
 - Turn on Time (Enable) (Max) : 55ns
 - Input/Output OFF-state Capacitance (Typ) : 18.5pF
 - Input/Output ON-state Capacitance (Typ) : 56pF
 - Features: Break-before-make, Low Harmonic Distortion
 - Ron Channel Match (Max) : 0.4Ω
 - Digital input leakage (Max) : 0.1
 
Texas Instruments
Electrical Datasheet
Die Physical Data:
Footprint: 0.826mm² (1280mil²)
Request Pad Layout
- Channels: 2
 - Config: 2:1 SPDT
 
VCC (Max): 5.50V
BW (Max): 105MHz
ICC (Max) @ VNOM: 0.75µA
RON (Max): 15.0Ω
RON: 0.70Ω
VIO (Min): 0.00V
VIO (Max): 5.50V
IIO (Cont): 200mA
- Channels: 2
 - Switch Type: SPDT
 
VCC (Max): 5.50V
ICC (Max): 0.75µA
BW (Max): 100MHz
ICC (Max) @ VNOM: n/a
RON: 0.70Ω
IO (CONT): 200A
- Green:Available from stock or at low factory MOQ.
 - Amber: Available on factory order with MOQ.
 - Red: High factory MOQ may apply, please ask for details.
 
- Green: This bare die is specified and tested for use in high reliability applications.
 - Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
 - Red: This bare die is not specified or specifically designed for use in high reliability applications.
 
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
 - Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
 - Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.