- Crosstalk : -81dB
- HBM ESD: 2kV
- ESD Charged Device Model : 1kV
- OFF-state leakage current (Max) : 10µA
- Turn on Time (Enable) (Max) : 10.5ns
- Input/Output OFF-state Capacitance (Typ) : 3pF
- Input/Output ON-state Capacitance (Typ) : 16pF
- Features: Low Harmonic Distortion, Low Power
- Ron Channel Match (Max) : 2Ω
- Digital input leakage (Max) : 1
Vendor:
Texas Instruments
Electrical Datasheet
Die Physical Data:
Footprint: 1.781mm² (2760mil²)
Request Pad Layout
- Channels: 4
- Config: 2:1 SPDT
VCC (Max): 3.60V
BW (Max): 300MHz
ICC (Max) @ VNOM: 10.00µA
RON (Max): 12.0Ω
RON: 5.50Ω
VIO (Min): 0.00V
VIO (Max): 3.60V
IIO (Cont): 64mA
- Channels: 4
- Switch Type: SPDT
VCC (Max): 3.60V
ICC (Max): 10.00µA
BW (Max): 300MHz
ICC (Max) @ VNOM: n/a
RON: 7.00Ω
IO (CONT): 64A
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.