- Features: Low Power, 5-3.3V Translation, IOFF
- ESD Charged Device Model : 1kV
- HBM ESD: 2kV
- Input Type: TTL/CMOS
- Output Type: TTL/CMOS
- Voltage(Nom): 2.5, 3.3V
- F @ Nom Voltage(Max): 100MHz
- ICC @ Nom Voltage(Max): 0.02mA
Texas Instruments
Electrical Datasheet
Die Physical Data:
Footprint: 1.045mm² (1620mil²)
Request Pad Layout
- Channels: 4
- Schmitt Trigger: No
- Config: 1:1 SPST
VCC (Max): 3.60V
BW (Max): 100MHz
ICC (Max) @ VNOM: 20µA
RON (Max): 9.5Ω
RON: 5.0Ω
VIO (Min): 0V
VIO (Max): 5.5V
IIO (Cont): 128Ma
- Channels: 4
- 3-State O/P: No
- Switch Type: SPST
VCC (Max): 3.60V
ICC (Max): 20µA
BW (Max): 100MHz
ICC (Max) @ VNOM: n/a
RON (Max): 10Ω
RON: 5Ω
IO (CONT): 128A
- Channels: 4
- Config: 1:1 SPST
VCC (Max): 3.60V
BW (Max): 100MHz
ICC (Max) @ VNOM: 20µA
RON (Max): 9.5Ω
RON: 5.0Ω
VIO (Min): 0.00V
VIO (Max): 5.50V
IIO (Cont): 128mA
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.