- InAlGaAs-epitaxial layer, MQW / Si Construction
- Radiant Power Φe (TYP) @ IF=20mA: est. 8.5mW (bare); est. 15mW (epoxy covered)
- Radiant Power Φe (TYP) @ IF=50mA: est. 26mW (bare); est. 41mW (epoxy covered)
- Radiant Power Φe (TYP) @ IF=70mA: est. 36mW (bare); est. 57mW (epoxy covered)
- Radiant Power Φe (TYP) @ IF=100mA: est. 43mW (bare); est. 79mW (epoxy covered)
Applications:
- Optical switching & data communication
- Position & tactile sensing
- Alarm & safety equipment
- Spectrology & imaging
- Oximetry, biological & medical sensing
EPIGAP
Electrical Datasheet
Die Physical Data:
Footprint: 0.123mm² (189.876mil²)
Request Pad Layout
- Polarity up: N (cathode)
Φe: 8.5mW
Φe (epoxy): 15.0mW
λp (MIN): n/a
λp (TYP): 880nm
λp (MAX): n/a
FWHM ΔΦ0.5: 25nm
tr / tf: -ns
VF @ IF: 1.35V
IR @ VR: 10/5µA/V
- Polarity up: N (cathode)
Φe: 8.5mW
Φe (epoxy): 15.0mW
λp (MIN): n/a
λp (TYP): 880nm
λp (MAX): n/a
FWHM ΔΦ0.5: 25nm
tr / tf: -ns
VF @ IF: 1.35V
IR @ VR: 10/5µA/V
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.