Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPS2058A

Fixed Current Limited Switch:
0.345A, 2.7-5.5V Quad (2In/4Out) Hi-Side MOSFET, Fault Report, Act-High Enable
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 2.508mm² (3888mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 4
  • Topology: Constant-Current
Specification:
VIN (MIN): 2.7V
VIN (MAX): 5.5V
ICONT (Max): 0.25A
Enable: USB Switch rDS (on): 80
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74HC86:
Quadruple 2-Input Exclusive-OR Gates
CD4013B:
CMOS Dual D-Type Flip Flop
SN74LS221:
Dual monostable multivibrators with Schmitt-trigger inputs
CD4017B:
CMOS Decade Counter with 10 Decoded Outputs
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.