Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPS2210A

PCMCIA/Cardbus Switch Matrix:
1A Single-Slot PC Card Power Switch w/ Serial Interface
Features:
  • Features:  Curr/Temp Protection, Over Current Reporting, Supports 12V, Supports VPP, VPP Good Reporting
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 4.439mm² (6880mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 1
  • Interface: Serial
Specification:
RDS (on) VGS=3: 85
RDS (on) VGS=5: 95
IAdj (Min): 1.0A
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

OPA2333:
1.8V, 17µA, microPower, Precision, Zero Drift CMOS Op Amp
LT1013:
Dual Precision Operational Amplifier
SN74HC86:
Quadruple 2-Input Exclusive-OR Gates
LT1009:
2.5-V Integrated Reference Circuit
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.