Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: UC3705

Low-Side Gate Driver:
Complementary High Speed Power Driver
Features:
  • Features:  Thermal Shutdown
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 2.637mm² (4088mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 1
  • Switch Type: MOSFET, IGBT
  • Ch I/P Logic: N/A
  • Input Threshold: TTL
Specification:
VCC (Min): 5.0V
VCC (Max): 40V
IO (PEAK): 1.5A
tpd: 100ns
tf: 40ns
V- @ HS Pin: 0V
tr: 40ns
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

OPA211:
1.1nV/rtHz Noise, Low Power, Precision Operational Amplifier in Tiny DFN-8 Package
CD74HC00:
High Speed CMOS Logic Quad 2-Input NAND Gates
SN74HC20:
Dual 4-Input Positive-NAND Gates
CD74HC02:
High Speed CMOS Logic Quad 2-Input NOR Gates
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.