Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPS75100

Backlight Driver IC:
Low Dropout, Two-Bank LED Driver with PWM Brightness Control
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 4.387mm² (6800mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 4
  • Topology: LDO
Specification:
VIN (MIN): 2.7V
VIN (MAX): 5.5V
ISD: 0.1µA
LEDs: 4VOUT (MAX): 3.6V
VOUT (MIN): 0.5V
Efficiency: 87%
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TLE2022:
Dual Precision Low-Power Single Supply Operational Amplifier
CD4013B:
CMOS Dual D-Type Flip Flop
SN74LS123:
Dual retriggerable monostable multivibrators
UC2843:
Current-Mode PWM Controller
EA2M:
ON Semi Serial 2-Mb SPI Ultra Low-Power EEPROM with ECC for high reliability portable or battery applications.
NTC020N120SC1:
ON Semi 1200 Volt 20mOhm 103A Silicon Carbide MOSFET specified at >=175°C maximum junction temperature.