Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPS54872

DDR Memory Power IC:
8A Active Bus Termination/ DDR Memory DC/DC Converter
Features:
  • Features:  Status Pin
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 10.243mm² (15876mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Type: DDR, DDR2, DDR3
  • Ctrl Mode: Voltage Mode
  • Output: VTT
  • Regulator Type: Step-Down Converter
Specification:
IQ: 11.0mA
VIN (MIN): 4.0V
VIN (MAX): 6.0V
IOUT VDDQ (Max):   n/a
IOUT VTT (Max): 8A
Bias VIN (Max): 6.00V
Bias VIN (Min): 4.000V
VOUT (Min) VTT: 0.2V
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74ACT04:
Hex Inverters
SN74LS04:
Hex inverters
SN74LS132:
Quad 2-input positive-NAND Schmitt triggers
UC2843:
Current-Mode PWM Controller
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.