Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPS60141

Boost Charge Pump:
Regulated 5-V Charge Pump Voltage Tripler With Power Good Indicator
Features:
  • Features:  Enable, Power Good
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 6.232mm² (9660mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Topology: Boost
  • Regulated Outputs: 1
Specification:
f(MAX): 450kHz
Frequency (MAX): 210kHz
IQ: 0.055mA
VIN (MIN): 1.8V
VIN (MAX): 3.6V
VOUT (MAX): 5.0V
VOUT (MIN): 5.0V
IOUT (MAX): 0.100A
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74ACT08:
Quadruple 2-Input Positive-AND Gates
SN74ACT00:
Quadruple 2-Input Positive-NAND Gates
SN74LS00:
Quad 2-input positive-NAND gates
CD4013B:
CMOS Dual D-Type Flip Flop
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.