Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: BQ24703

Battery Charger IC:
Multi-Chemistry Battery Charge Controller and System Power Selector
Features:
  • Features:  Power Path
  • # Series Cells:  2, 3, 4#
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 7.538mm² (11684mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Ctrl Mode: Standalone (RC-Settable)
  • Cell Chemistry: Li-Ion/Li-Polymer
  • Topology: Switch-Mode Buck
Specification:
VIN (MIN): 7.0V
VIN (MAX): 28.0V
Vabs (Max): 30.0V
Batt Charge: AdjustableV
ICharge (Max): 10.0A
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL084:
JFET-Input Operational Amplifier
CD4049UB:
CMOS Hex Inverting Buffer/Converter
CD4050B:
CMOS Hex Non-Inverting Buffer/Converter
SN74HC86:
Quadruple 2-Input Exclusive-OR Gates
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.