Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: BQ24008

Battery Charger IC:
Linear 1-cell Li-Ion Battery Charger W/Integrated FET, Bi-Color LED
Features:
  • Features:  Integrated FET, Temp Monitoring (Thermistor Pin)
  • # Series Cells:  1#
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 6.449mm² (9996mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Ctrl Mode: Standalone (RC-Settable)
  • Cell Chemistry: Li-Ion/Li-Polymer
  • Topology: Linear
Specification:
VIN (MIN): 4.5V
VIN (MAX): 10.0V
Vabs (Max): 13.5V
Batt Charge: 4.1 (Fixed), 4.2 (Fixed)V
ICharge (Max): 1.2A
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

OPA2333:
1.8V, 17µA, microPower, Precision, Zero Drift CMOS Op Amp
TL084:
JFET-Input Operational Amplifier
SN74HC14:
Hex Schmitt-Trigger Inverters
SN74LS32:
Quad 2-input positive-OR gates
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.