Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: IS46LR32160C

Mobile DDR:
4M x 32 Bits x 4 banks Mobile DDR SDRAM Memory Bare Die
This bare die is well suited for integration into high density MCP (Multi-Chip-Package), MCM (Multi-Chip-Module) & SiP (System-In-Package) solutions. Supported by the highest quality KGD test flow, wafers deliver high reliability and superior yield.
Features:
  • JEDEC standard 1.8V power supply
  • VDD = 1.8V, VDDQ = 1.8V
  • Four internal banks for concurrent operation
  • MRS cycle with address key programs:
    • CAS latency 2, 3 (clock)
    • Burst length (2, 4, 8, 16)
    • Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
  • Bidirectional/differential data strobe per byte of data (DQS)
  • DM for write masking only
  • Edge aligned data & data strobe output
  • Center aligned data & data strobe input
  • 64ms refresh period (8K cycle)
  • Auto & self refresh
  • Concurrent Auto Precharge
  • Maximum clock frequency up to 200MHz
  • Maximum data rate up to 400Mbps/pin
  • Power Saving support
    • PASR (Partial Array Self Refresh)
    • Auto TCSR (Temperature Compensated Self Refresh)
    • Deep Power Down Mode
    • Programmable Driver Strength Control by Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength
  • Status Register Read (SRR)
  • LVCMOS compatible inputs/outputs
  • Operation Temperature -40°C to 105°C
  • Committed long term support with very low obsolescence or mask change rate.

To request Die Physical Data please Contact Engineering.
Vendor:
ISSI
  Electrical Datasheet

Die Physical Data:
Footprint: 1mm² (1mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Density: 5.512Mb
Specification:
Depth: 16Mb
Width: VS: 1.8V
Refresh: 8K
Speed: 200, 166, 133MHz
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

OPA2333:
1.8V, 17µA, microPower, Precision, Zero Drift CMOS Op Amp
CD4050B:
CMOS Hex Non-Inverting Buffer/Converter
CD74HC02:
High Speed CMOS Logic Quad 2-Input NOR Gates
UC2834:
High Efficiency Linear Regulator
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.