Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SN74S51

Combination logic Gate:
Dual 2-wide 2-input AND-OR-Invert Gates
Features:
  • Family:  S
  • Voltage(s) (Nom):  5V
  • tpd @ Nom Voltage(s) :  22ns
  • Output Drive IOL/IOH (Max):  0.4/-16mA
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 1.219mm² (1890mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Bits: 2
  • I/P Level: TTL
  • O/P Level: TTL
Specification:
VCC (Min): 4.75V
VCC (Max): 5.25V
fMIN @ VNOM: 50MHz
ICC (Max) @ VNOM: 8.000mA
VNOM (Max): 5V
Output Drive (Max): 16.0mA
tpd (Max) @ VNOM: 22.0ns
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

CD4093B:
CMOS Quad 2-Input NAND Schmitt Triggers
SN74ALS00A:
Quadruple 2-Input Positive-NAND Gates
CD4001B:
CMOS Quad 2-Input NOR Gate
SN74LS109A:
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear and Preset
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.