Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: XTR101

4-20mA Sensor Conditioner:
Precision, Low Drift 4-20mA Two-Wire Transmitter
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 10.161mm² (15750mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
    N/A
Specification:
VS (Min): 11.60V
VS (Max): 40.00V
CMRR (Min): 90dB
VOS Drift: 0.75µV/°C
Non-Linearity (Max): 0.010%
VOS (Max): 30µV
Span Error(Max): 5.0%
Output Zero Error(Max): 30µA
Loop Voltage: 11.6 to 40V
Full Scale Input Range: VOUT (AUX):   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

LMV791:
17 MHz, Low Noise, CMOS Input, 1.8V Operational Amplifiers with Shutdown
SN74LS74A:
Dual D-type pos.-edge-triggered flip-flops with preset and clear
SN74LS164:
Serial-in shift registers
CD4015B:
CMOS Dual 4-Stage Static Shift Register
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.