Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: ISO5500 Tx

Isolated Gate Driver:
2.5 A Isolated IGBT/MOSFET Gate Driver
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 2.164mm² (3354mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 1
  • Switch Type: IGBT
  • Transient Overvoltage Rating: 6000Vpk
  • Enable/Disable: -
Specification:
VCC (Min): 3.00V
VCC (Max): 5.50V
IO (PEAK): 2.5A
tpd: 300ns
Iso Rating: 4,243Vrms
VOUT (MIN): 15.00V
VO (Max): 30.00V
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL082:
JFET-Input Operational Amplifier
SN74LS86A:
Quad 2-input exclusive-OR gates
SN74LS123:
Dual retriggerable monostable multivibrators
SN74LS138:
3-line to 8-line decoder / demultiplexer
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.