Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SN65HVD1176

RS-485 Interface IC:
PROFIBUS RS-485 Transceiver
Features:
  • IEC 61000-4-2 Contact (±):  N/AkV
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 4.970mm² (7704mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Duplex: Half
  • Fail Safe: Idle, Open, Short
Specification:
ICC (Max) @ VNOM: 6.0mA
VS: 5V
VCM: -7 to 12V
Datarate: 40.00Mbps
ESD HBM: 10kV
Fault Protection Voltage: -7 to 12V
Tx: 1Rx: 1Nodes: 8
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL062:
Dual Low-Power JFET-Input General-Purpose Operational Amplifier
SN74LS165A:
Serial-out shift registers
SN74LS138:
3-line to 8-line decoder / demultiplexer
SN75240:
Dual USB Port Transient Suppressor
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.