Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: ULN2003A

Peripheral Driver & Actuator IC:
High-Voltage, High-Current Darlington Transistor Arrays
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 3.385mm² (5247mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • I/P Level: CMOS, TTL
Specification:
IO (PEAK): 500mA
tpd: 250ns
Drivers: 7IOUT/CH (Max): 500mA
ICEX: 50µA
VOUT (MAX): 50V
Switching Voltage(Max): 50V
VOL Lowest Current: 900mV
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

OPA2333:
1.8V, 17µA, microPower, Precision, Zero Drift CMOS Op Amp
SN74LS04:
Hex inverters
SN74LS20:
Dual 4-input positive-NAND gates
CD74HC4024:
High Speed CMOS Logic 7-Stage Binary Ripple Counter
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.