Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SN75454B

Peripheral Driver & Actuator IC:
Dual Very-High Speed, High-Current Peripheral Drivers
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 1.270mm² (1968mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • I/P Level: TTL
Specification:
IO (PEAK): 500mA
tpd: 27ns
Drivers: 2IOUT/CH (Max): 400mA
ICEX: 100µA
VOUT (MAX): 30V
Switching Voltage(Max): 20V
VOL Lowest Current: 250mV
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74LS10:
Triple 3-input positive-NAND gates
SN74HC32:
Quadruple 2-Input Positive-OR Gates
CD4001B:
CMOS Quad 2-Input NOR Gate
SN74F86:
Quadruple 2-Input Exclusive-OR Gates
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.