- Ultra-fast 50 nanosecond typical recovery time (IF = 0.5A, IR = 1.0A, IREC = 0.25A)
- 175°C operating junction temperature
- Low forward voltage drop: 1.25V maximum at 25°C
- Low leakage current: 1µA maximum at 25°C
- High forward surge capability
- Reverse voltage: 600V
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 1mm² (1550.005mil²)
Request Pad Layout
- N/A
IO: 1A
IFSM: 35A
VF @ IF: 1.250V
IF @ VF: 1A
IR(MAX) @ VR 25°C: 1.00µA
IR @ VR: 600V
trr 25°C: 50ns
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.