- Ultra-fast 25 nanosecond maximum recovery time (IF = 0.5A, IR = 1.0A, IREC = 0.25A)
- 175°C operating junction temperature
- Low forward voltage drop: 0.71V maximum at 150°C
- Low leakage current: 50µA maximum at 150°C
- High forward surge capability
- Reverse voltage: 100V
ON Semi
Electrical Datasheet
Die Physical Data:
Footprint: 1.364mm² (2114.554mil²)
Request Pad Layout
- N/A
IO: 1A
IFSM: 35A
VF @ IF: 0.875V
IF @ VF: 1A
IR(MAX) @ VR 25°C: 2.00µA
IR @ VR: 100V
trr 25°C: 25ns
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.