Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TMS320VC5416

Ultra Low Power DSP:
Digital Signal Processor
Features:
  • Applications:  Communications and Telecom, Industrial
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 24.532mm² (38025mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • DMA: 1 6-Ch EDMACh
  • DSP: 1 C54x
  • DSP Instruction: Fixed Point
  • McBSP: 1
  • Operating Systems: DSP/BIOS
  • UART (SCI): 1
Specification:
VS (IO): 3.3V
DSP MHz(Max): Gen Purpose Memory: Async SRAMMHz
HPI:
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74S04:
Hex inverters
CD4093B:
CMOS Quad 2-Input NAND Schmitt Triggers
SN74LS02:
Quad 2-input positive-NOR gates
SN74HC4060:
14-Stage Asynchronous Binary Counters And Oscillators
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.