Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TLC5602

High Speed DAC (>10MSPS):
8-Bit, 30MSPS Single DAC
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 3.909mm² (6059mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Bits: 8
  • Interface: Par CMOS
  • Architecture: I-Steering
  • DAC Channels: 1
Specification:
PC(Max): 80mW
Settling Time: 0.0300µs
SFDR:   n/a
Update Rate: 30MSPS
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74HCU04:
Hex Inverters
SN74HC86:
Quadruple 2-Input Exclusive-OR Gates
CD4013B:
CMOS Dual D-Type Flip Flop
SN74LS161A:
Synchronous 4-Bit Binary Counters
EA2M:
ON Semi Serial 2-Mb SPI Ultra Low-Power EEPROM with ECC for high reliability portable or battery applications.
NTC020N120SC1:
ON Semi 1200 Volt 20mOhm 103A Silicon Carbide MOSFET specified at >=175°C maximum junction temperature.