Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPA6112A2

Headphone Amplifier:
150-mW Stereo Headphone Audio Amplifier with Differential Input
Features:
  • Class-AB Headphone:  Yes
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 1.581mm² (2450mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Vol Ctrl: No
  • HP Channels: Stereo
  • GND-CTR Outputs: No
Specification:
VS (Min): 2.50V
VS (Max): 5.50V
IQ per Channel: 0.75mA
PSRR: 83dB
THD + N @ 1 kHz: 0.250% @ HP
POUT: 0.150W
Load (Min): 8Ω
ISD: 10.00µA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74HC14:
Hex Schmitt-Trigger Inverters
CD4093B:
CMOS Quad 2-Input NAND Schmitt Triggers
CD4001B:
CMOS Quad 2-Input NOR Gate
CD4015B:
CMOS Dual 4-Stage Static Shift Register
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.