Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPA6100A2

Headphone Amplifier:
50-mW Ultra Low-Voltage Stereo Headphone Audio Amplifier
Features:
  • Class-AB Headphone:  Yes
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 1.484mm² (2300mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Vol Ctrl: No
  • HP Channels: Stereo
  • GND-CTR Outputs: No
Specification:
VS (Min): 1.60V
VS (Max): 3.60V
IQ per Channel: 0.80mA
PSRR: 72dB
THD + N @ 1 kHz: 0.100% @ HP
POUT: 0.050W
Load (Min): 16Ω
ISD: 0.05µA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74HC04:
Hex Inverters
SN74LS04:
Hex inverters
SN74LS165A:
Serial-out shift registers
CD4017B:
CMOS Decade Counter with 10 Decoded Outputs
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.