- Architecture: FET
Texas Instruments
Electrical Datasheet
Die Physical Data:
Footprint: 2.283mm² (3538mil²)
Request Pad Layout
- Channels: 2
VS (Max): 36.00V
Slew Rate: 20V/µs
Rail - Rail: CMRR (Min): 126dB
Gain BW: 11MHz
IIB (Max): 20pA
IO: n/a
IQ per Channel: 1.8mA
VN: 5.1nV√Hz
VOS (Max): 3.5mV
- Channels: 2
- Shutdown: No
VS (Max): 36.00V
Slew Rate: 20.0000V/µs
Rail - Rail: CMRR (Typ): 126dB
Gain BW: 11.0000MHz
IIB (Max): 20.00pA
IO: 30.0mA
IQ per Channel: 1.80000mA
VOS Drift: n/a
VN: 5.1nV√Hz
VOS (Max): 1.000mV
- Channels: 2
- Shutdown: No
VS (Max): 36.00V
Slew Rate: 20.00V/µs
Rail - Rail: CMRR (Typ): 126dB
Gain BW: 11.0MHz
IIB (Max): 20.0pA
IO: 30mA
IQ per Channel: 1.8000mA
VOS Drift: n/a
VN: 5.10nV√Hz
VOS (Max): 1.00mV
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.