- VOS (Typ) Drift: 1.2µV/°C
- Non-Linearity (Max): 0.0015%
- Settling Time (001%): 2.55µs
Texas Instruments
Electrical Datasheet
Die Physical Data:
Footprint: 2.080mm² (3224mil²)
Request Pad Layout
- Channels: 2
VS (Max): 5.50V
Slew Rate: 3.0V/µs
VICM (Max) High: 0.1V
VICM (Min) Low : -0.1V
Gain (Max): 128V/V
Gain (Min): 1.000V/V
Gain Error : 0.100%
IIB (Max): 5.00nA
IQ: 1.0mA
VIO (Max): 100µV
VN: 13.0nV√Hz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.