Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: LMC6081

General Purpose Amplifier:
LMC6081 is a precision low offset voltage operational amplifier capable of single supply operation. Featuring ultra-low input bias current, high voltage gain, rail-to-rail output swing and an input common mode voltage range that includes ground.
The LMC6081 or LMC6081 MDA is ideally suited for precision circuit applications.
Features:
** END OF LIFE ** NOT RECOMMENDED FOR NEW DESIGN
  • Low VOS: 150 µV
  • Operates from 4.5V to 15V single supply
  • Input Current: 10 fA at 25°C;
  • Output swing to within 20 mV of supply rail,100k load
  • Input common-mode range includes V-
  • High voltage gain: 130 dB
  • Improved latchup immunity
  • Low Input-Referred Voltage Noise: 22 nV/vHz at 1 kHz
  • Low Input-Referred Current Noise: 0.2 fA/vHz at 1 kHz

Applications:

  • Instrumentation amplifier
  • Photodiode and infrared detector preamplifier
  • Transducer amplifiers
  • Medical instrumentation
  • D/A converter
  • Charge amplifier for piezoelectric transducers
  • Precision full-wave rectifiers
  • Integrators
  • References
  • Sample-and-hold circuits
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 2.519mm² (3905mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 1
Specification:
Rail - Rail: VS (Min): 4.50V
VS (Max): 16.00V
Gain BW: 1.300MHz
Slew Rate: 35.00V/µs
VOS (Max): 0.350mV
IIB (Max): 0.00400nA
CMRR (Typ): 85dB
VN: 22.0nV√Hz
IQ per Channel: 0.8500mA
IO: 30.0mA
VOS Drift: 1.0µV/°C
Functional:
  • Channels: 1
  • Shutdown: No
Specification:
Rail - Rail: VS (Min): 4.50V
VS (Max): 16.00V
Gain BW: 1.3000MHz
Slew Rate: 35.0000V/µs
VOS (Max): 0.350mV
VOS Drift: 1.000µV/°C
IIB (Max): 4.00pA
CMRR (Typ): 85dB
VN: 22.0nV√Hz
IQ per Channel: 0.85000mA
IO: 30.0mA
Functional:
  • Channels: 1
  • Shutdown: No
Specification:
Rail - Rail: VS (Min): 4.50V
VS (Max): 16.00V
Gain BW: 1.300MHz
Slew Rate: 35.00V/µs
IIB (Max): 4.0pA
VOS (Max): 0.350mV
VOS Drift: 1.00µV/°C
IQ per Channel: 0.850mA
VN: 22.0nV√Hz
IO: 30mA
CMRR (Typ): 85dB
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74LS02:
Quad 2-input positive-NOR gates
SN74LS74A:
Dual D-type pos.-edge-triggered flip-flops with preset and clear
SN74LS174:
Hex D-Type Flip-Flops With Clear
LT1009:
2.5-V Integrated Reference Circuit
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.