Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: INA121

Dual Supply Amplifier:
FET-Input, Low Power Instrumentation Amplifier
Features:
  • CMRR (Min):  96dB
  • BW @ G=100 (Min):  50kHz
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 7.277mm² (11280mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 1
Specification:
VS (Min): 4.50V
VS (Max): 36.00V
Bandwidth (Min Gain): 0.60MHz
Gain (Max): 10,000V/V
Gain (Min): 1V/V
Gain Error (Max): 0.70%
IIB (Max): 0.050000nA
VIO (Max): 500µV
VIO (Max) Drift: 5.00µV/°C
IQ per Channel: 0.450mA
Non-Linearity (Max): 0.005%
VN: 20.0nV√Hz
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL084:
JFET-Input Operational Amplifier
CD40106B:
CMOS Hex Schmitt Triggers
SN74LS04:
Hex inverters
SN74HC4060:
14-Stage Asynchronous Binary Counters And Oscillators
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.