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Transistor

Symbol Parameter Max test limit  Max reading 
V(BR)CEO, CES, CER Collector-Emitter Breakdown Voltage IC = 200mA 614V
V(BR)CBO Collector-Base Breakdown Voltage IC = 200mA 614V
V(BR)EBO Emitter-Base Breakdown Voltage IEB = 50A 10V
VCE(sat) Collector-Emitter saturation voltage  IB = 50A  10V 
IC = 50A
 VBE(sat) Base-Emitter saturation voltage  IB = 50A  10V 
IC = 50A
VBE(on) Base-Emitter threshold voltage IBE = 50A 10V
ICEO , ICBO, ICES,  ICER Collector cutoff current VCE = 20V 1mA
IEBO Emitter cutoff current VEB = 10V  100mA
hfe Small-signal DC current gain  VC = 10V  200V 
f = 1kHz