Innovate > Integrate > Empower - Design at Die Level

MOSFET / JFET

Symbol  Parameter  Max test limit  Max reading 
RDS (on)   Static drain-source on-state resistance  IDS = 50A  1kΩ 
VGS = 10V 
V(BR)DSS  Breakdown voltage drain-source  IDS = 200A  614V 
IDSS  Zero-gate-voltage drain current VDS = 614V  1mA 
VGS = 614V 
IGSSF   Forward gate current  VGS = 614V  1mA
IGSSR Reverse gate current VGS = 614V  1mA
VGS(th) Gate threshold voltage  IDS = 50A  10V 
VDS(on)  Drain source voltage  VGS = 10V  10V 
ID = 50A 
ID(on)  On-State Drain Current  VGS = 10V  50A 
VDS = 10V 
gfs  Forward Transconductance VDS = 10V  2000 S 
IDS = 50A