We are pleased to announce we now offer GeneSiC Silicon Carbide (SiC) Schottky Diodes & MOSFETs in bare die form.
- Voltage range from 600V through to 6.5kV.
- Support for low MOQ prototype material through to volume production
- Equal-to or electrically superior alternatives versus long lead-times from other provider.
Product highlights...
MOSFETs available in mass production
1200V 12mΩ
1700V 20mΩ
3300V 15mΩ
6500V 50mΩ
6500V 300mΩ
6500V 325mΩ (Integrated-Schottky SiC MOSFET - On Same Die)
There are other Silicon Carbide MOSFET die available outside of the above list which replace most existing SiC MOSFETs from other vendors - Please enquire with your exact specification.
MOSFETs available now for sampling
750V 10mΩ
750V 12mΩ
1200V 10mΩ
Schottky Diodes available in mass production
1200V - 30A through 100A - Max VF = 1.5V
1700V - 75A - Max VF = 2.4V
3300V - 0.3A and 50A - Max VF = 1.95V
There are other Silicon Carbide Bare Die Rectifiers available outside of the above list which replace most existing SiC Diodes from other vendors - Please enquire with your exact specification.
For electrical requirements not listed above please contact us as there are both new and older devices that are potentially available to meet specification needs.
Additionally we offer custom die selection for MOSFET voltage gate thresholds to assist with applications that utilize paralleling and need close die-to-die matching.
