We are pleased to announce we now offer Senan Silicon Carbide (SiC) MOSFETs in bare die form.
- Voltage range from 650V through to 1.7kV.
- Support for low MOQ prototype material through to volume production
- Equal-to or electrically superior alternatives versus long lead-times from other provider
- Customizable Top Metal and Back Metal to suit either wire-bonding or sinter assembly methods
- !!! BEST INDUSTRY PRICE / PERFORMANCE RATIO !!!
Product highlights...
MOSFETs available in mass production
650V 27mΩ 83A
650V 35mΩ 60A
650V 50mΩ 45A
750V 11mΩ 124A
1200V 58mΩ 32A
1200V 75mΩ 41A
1200V 32mΩ 77A
1200V 37mΩ 111A
1200V 18mΩ 124A
1200V 16mΩ 132A
1200V 13mΩ 160A
1700V 700mΩ 7A
There are other Silicon Carbide MOSFET die available outside of the above list which replace most existing SiC MOSFETs from other vendors - Please enquire with your exact specification.
For electrical requirements not listed above please contact us as there are both new and older devices that are potentially available to meet specification needs.
Additionally we offer custom die selection for MOSFET voltage gate thresholds to assist with applications that utilize paralleling and need close die-to-die matching.
