| Symbol | Parameter | Max test limit | Max reading |
| V(BR)CEO, CES, CER | Collector-Emitter Breakdown Voltage | IC = 200mA | 614V |
| V(BR)CBO | Collector-Base Breakdown Voltage | IC = 200mA | 614V |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IEB = 50A | 10V |
| VCE(sat) | Collector-Emitter saturation voltage | IB = 50A | 10V |
| IC = 50A | |||
| VBE(sat) | Base-Emitter saturation voltage | IB = 50A | 10V |
| IC = 50A | |||
| VBE(on) | Base-Emitter threshold voltage | IBE = 50A | 10V |
| ICEO , ICBO, ICES, ICER | Collector cutoff current | VCE = 20V | 1mA |
| IEBO | Emitter cutoff current | VEB = 10V | 100mA |
| hfe | Small-signal DC current gain | VC = 10V | 200V |
| f = 1kHz |
Transistor
Featured Product
INN650N080BS
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
News and Articles
Sanan SiC Bare Die MOSFETS
Silicon Carbide (SiC) Bare Die MOSFETs from Sanan Semiconductor with best PRICE / PERFORMANCE ratio in the industry.
