| Symbol | Parameter | Max test limit | Max reading |
| V(BR)CEO, CES, CER | Collector-Emitter Breakdown Voltage | IC = 200mA | 614V |
| V(BR)CBO | Collector-Base Breakdown Voltage | IC = 200mA | 614V |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IEB = 50A | 10V |
| VCE(sat) | Collector-Emitter saturation voltage | IB = 50A | 10V |
| IC = 50A | |||
| VBE(sat) | Base-Emitter saturation voltage | IB = 50A | 10V |
| IC = 50A | |||
| VBE(on) | Base-Emitter threshold voltage | IBE = 50A | 10V |
| ICEO , ICBO, ICES, ICER | Collector cutoff current | VCE = 20V | 1mA |
| IEBO | Emitter cutoff current | VEB = 10V | 100mA |
| hfe | Small-signal DC current gain | VC = 10V | 200V |
| f = 1kHz |
Transistor
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